- 06.
Interfacial negative magnetization in Ni encapsulated layer tunable nested MoS2 nanostructure for robust memory applications
Interfacial negative magnetization in Ni encapsulated layer tunable nested MoS2 nanostructure for robust memory applications
- Shatabda Bhattacharya, Tatsuhiko Ohto, Hirokazu Tada, and Shyamal K. Saha
Nanoscale Advances, accepted.
- DOI: 10.1039/D3NA00343D